bc856a/b, bc857a/b/c, bc858a/b/c 250mw, pnp small signal transistor small signal transistor ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish with nickel(ni) underplate ? pb free version and rohs compliant min max min max ? case : sot- 23 small outline plastic package 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 0.30 0.50 0.012 0.020 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.043 package packing marking sot-23 3k / 7" reel 3a sot-23 3k / 7" reel 3b sot-23 3k / 7" reel 3e sot-23 3k / 7" reel 3f sot-23 3k / 7" reel 3g sot-23 3k / 7" reel 3j sot-23 3k / 7" reel 3k sot-23 3k / 7" reel 3l sot-23 3k / 7" reel 3a sot-23 3k / 7" reel 3b sot-23 3k / 7" reel 3e sot-23 3k / 7" reel 3f sot-23 3k / 7" reel 3g sot-23 3k / 7" reel 3j sot-23 3k / 7" reel 3k sot-23 3k / 7" reel 3l maximum ratings bc856 bc857 bc858 bc856 bc857 bc858 notes:1. valid provided that electrodes are kept at ambient temperature bc857c rfg bc858a rfg bc858b rfg bc858c rfg sot-23 type number symbol ? epitaxial planar die construction bc858b rf ? weight : 0.008gram (approximately) maximum ratings and electrical characteristics c unit (mm) ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed -5 250 collector-base voltage collector-emitter voltage v cbo v ceo unit (inch) dimensions bc856a rfg suggested pad layout v v -65 -45 -30 -80 -50 -30 bc858c rf bc856b rfg bc857a rfg bc857b rfg rating at 25 c ambient temperature unless otherwise specified. b power dissipation p d bc857a rf bc857b rf bc857c rf bc858a rf value features mechanical data ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code a ? high temperature soldering guaranteed: 260 c/10s f d e junction and storage temperature range t j , t stg emitter-base voltage v ebo collector current i c ordering information part no. bc856a rf bc856b rf units c -0.1 -55 to + 150 a mw v b a c d f e 2 emitter 3 collector 1 base 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 version : e11
bc856a/b, bc857a/b/c, bc858a/b/c 250mw, pnp small signal transistor small signal transistor electrical characteristics units collector-base breakdown voltage bc856 bc857 bc858 i c = -10ai e = 0 v collector-emitter breakdown voltage bc856 bc857 bc858 i c = -10ma i b = 0 v i e = -1ai c = 0 v v cb = -30v i e = 0 na v eb = -5v i c =0 a v ce = -5v i c = -2ma i c = -100ma i b = -5ma v i c = -100ma i b = -5ma v v ce = -5v i c = -10ma f= 100mhz mhz tape & reel specification carrier width carrier length carrier depth sprocket hole reel outside diameter reel inner diameter feed hole width sprocke hole position punch hole position sprocke hole pitch embossment center overall tape thickness tape width reel width bc856a, bc857a, bc858a dc current gain bc856b, bc857b, bc858b bc857c, bc858c 2.00 0.05 emitter-base breakdown voltage 0.229 0.013 collector cut-off current i ebo - 125 220 420 h fe emitter cut-off current 13.0 0.20 1.75 0.10 3.50 0.05 - - i cbo v (br)ceo v (br)ebo 12.30 0.20 8.10 0.20 w 4.00 0.10 e f - - transition frequency w1 p0 p1 100 f t - t d1 d2 - -5 -0.1 250 475 800 - -15 min max type number -80 -50 -30 symbol v (br)cbo -65 -45 -30 55 min item symbol dimension(mm) a b 3.15 0.10 1.50 0.10 -0.65 -1.1 178 1 d d c 2.77 0.10 1.22 0.10 collector-emitter saturation voltage v ce(sat) base-emitter saturation voltage v be(sat) w1 d1 d2 d t c d p1 p0 a b f w e direction of feed top cover tape carieer tape any additional label (if required) tsc label
bc856a/b, bc857a/b/c, bc858a/b/c 250mw, pnp small signal transistor small signal transistor rating and characteristic curves -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = - 50 a i b = - 100 a i b = - 150 a i b = - 200 a i b = - 250 a i b = - 300 a i b = - 350 a i b = - 400 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 10 100 1000 v ce = - 5v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = - 5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 f=1mhz i e =0 f t [mhz], current gain-bandwidth product i c [ma], collector current figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product version : e11
bc856a/b, bc857a/b/c, bc858a/b/c 250mw, pnp small signal transistor small signal transistor rating and characteristic curves figure 7. dc current gain as a function of collector current; typical values figure 8. base-emitter voltage as a function of collector current; typical values v be -i c hfe - i c version : e11
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